US Patent Issued to BOYA ADVANCED MATERIALS on July 14 for "Open Czochralski furnace for single crystal growth" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,188, issued on July 14, was assigned to BOYA ADVANCED MATERIALS Co. LTD. (Meishan, China).

"Open Czochralski furnace for single crystal growth" was invented by Yu Wang (Meishan, China), Weiming Guan (Meishan, China) and Zhenxing Liang (Meishan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed...