US Patent Issued to BOE TECHNOLOGY GROUP on Sept. 8 for "Method for manufacturing a nanowire using an inducing particle in a guide trench, method for manufacturing a thin film transistor, thin film transistor, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,413, issued on Sept. 8, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing).

"Method for manufacturing a nanowire using an inducing particle in a guide trench, method for manufacturing a thin film transistor, thin film transistor, and semiconductor device" was invented by Hao Wu (Beijing) and Liuqing Li (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for manufacturing a nanowire, a method for manufacturing a thin film transistor, a thin film transistor and a semiconductor device. The method for manufacturing the nanowire includes: preparing an insulating layer on a first surface of a substrate; pr...