ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,612, issued on July 28, was assigned to BOE Technology Group Co. Ltd. (Beijing).
"Manufacturing method for patterned quantum dot film layer comprising replacing native ligands of quantum dot thin film by replacement ligands" was invented by Haowei Wang (Beijing).
According to the abstract* released by the U.S. Patent & Trademark Office: "A patterned quantum dot film layer, a quantum dot light-emitting device and a manufacturing method. The manufacturing method includes: forming a patterned mask layer on one side of a base substrate; forming a quantum dot thin film on the side of the mask layer that faces away from the base substrate, the quantum dot thin film includes quantum dot...