US Patent Issued to Board of Regents of the University of Nebraska on Sept. 8 for "HfS 3 field-effect transistors with a two-dimensional hole gas" (Nebraska Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,196, issued on Sept. 8, was assigned to Board of Regents of the University of Nebraska (Lincoln, Neb.).

"HfS 3 field-effect transistors with a two-dimensional hole gas" was invented by Archit Dhingra (Lincoln, Neb.), Peter A. Dowben (Lincoln, Neb.), Alexey Lipatov (Lincoln, Neb.) and Alexander Sinitskii (Lincoln, Neb.).

According to the abstract* released by the U.S. Patent & Trademark Office: "HfS3-based semiconductor devices that include a substrate layer, a substrate dielectric layer formed on the substrate layer, a bulk layer formed on the substrate dielectric layer, the bulk layer comprising as-synthesized n-type HfS3, and a p-type HfS3 layer formed on the bulk layer, wherei...