US Patent Issued to Beijing Superstring Academy of Memory Technology, INSTITUTE OF MIRCOELECTRONICS, CHINESE ACADEMY OF SCIENCES on April 21 for "Memory device and method of manufacturing memory device" (Chinese, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,514, issued on April 21, was assigned to Beijing Superstring Academy of Memory Technology (Beijing) and INSTITUTE OF MIRCOELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Memory device and method of manufacturing memory device" was invented by Ziyi Liu (Beijing) and Huilong Zhu (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory unit array on substrate, the memory unit array includes a plurality of memory units, each memory unit includes: a left and a right stack arranged at intervals in a horizontal direction. The left stack and right stacks each include a lower isolation layer, PMOS layer, firs...