US Patent Issued to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Oct. 27 for "Vertical MOSFET device and method of manufacturing vertical MOSFET device" (American, Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,674, issued on Oct. 27, was assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing) and INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Vertical MOSFET device and method of manufacturing vertical MOSFET device" was invented by Huilong Zhu (Poughkeepsie, N.Y.) and Zhongrui Xiao (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The vertical MOSFET device includes: an active region including a first source/drain layer, a channel layer and a second source/drain layer vertically stacked on a substrate in sequence, wherein an outer periphery of the channel layer is recessed with respect to outer peripheries of t...