US Patent Issued to Beijing Orient Institute of Measurement and Test on June 16 for "Low-magnetic-field gallium arsenide quantum hall resistance sample and preparation thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,512, issued on June 16, was assigned to Beijing Orient Institute of Measurement and Test (Beijing).

"Low-magnetic-field gallium arsenide quantum hall resistance sample and preparation thereof" was invented by Xiaoding Huang (Beijing), Zhongwei Wang (Beijing), Jianzhen Cai (Beijing), Yang Wang (Beijing), Yuqiao Huang (Beijing) and Yiping Zeng (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A low-magnetic-field gallium arsenide Quantum Hall Resistance sample can reproduce a Quantum Hall Resistance effect under lower magnetic field conditions, and has a wider plateau width of the quantum resistance sample being equal or greater than 0.6 T, and ...