ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,754, issued on May 26, was assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT Co. LTD. (Beijing).

"Oxide film preparation method" was invented by Jianheng Luo (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The oxide film preparation method includes placing a wafer in a reaction chamber, introducing a first mixed gas of a bombardment gas and an oxidization gas into the reaction chamber, applying DC power and radio frequency (RF) power to the target, exciting the first mixed gas to form a plasma to bombard the target to form an oxide film on the wafer, stopping applying the DC power and the RF power on the target, introducing a second mixed ...