US Patent Issued to AZUR SPACE Solar Power on Sept. 22 for "Method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer" (German Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,480, issued on Sept. 22, was assigned to AZUR SPACE Solar Power GmbH (Heilbronn, Germany).

"Method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer" was invented by Wolfgang Koestler (Heilbronn, Germany), Steffen Sommer (Tamm, Germany) and Cherubin Noumissing Sao (Heilbronn, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer, and the semiconductor wafer is designed as a substrate and has an upper side, a buffer layer and the semiconductor layer being formed on the upper side, and a carrier layer being formed above th...