US Patent Issued to Avago Technologies International Sales on June 23 for "Gate all-around laterally diffused metal-oxide semiconductor field effect transistor" (California Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,639, issued on June 23, was assigned to Avago Technologies International Sales Pte. Ltd. (Singapore).

"Gate all-around laterally diffused metal-oxide semiconductor field effect transistor" was invented by Qing Liu (Irvine, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate all-around laterally diffused metal-oxide semiconductor device is provided. An apparatus includes a substrate, two or more first sheets disposed on the substrate, a gate disposed on the substrate and at least part of the two or more first sheets, and a first epitaxial layer disposed on the substrate on a first side of the gate and at least part of the two or more first s...