ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,504, issued on July 28, was assigned to AUO Corp. (Hsin-Chu, Taiwan).

"Thin film transistor and manufacturing method thereof" was invented by Ya-Qin Huang (Hsin-Chu, Taiwan), Wan-Ching Su (Hsin-Chu, Taiwan), Yi-Da He (Hsin-Chu, Taiwan) and Ming-Wei Sun (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer has a first heavily doped region, a second heavily doped region, a third heavily doped region, an intrinsic region and a lightly doped region. The gate shields the intrinsic region and a first portion of t...