US Patent Issued to ATOMERA on May 19 for "Methods for making bipolar junction transistors including emitter-base and base-collector superlattices" (Arizona Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,155, issued on May 19, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Methods for making bipolar junction transistors including emitter-base and base-collector superlattices" was invented by Richard Burton (Phoenix).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a bipolar junction transistor (BJT) may include forming a first superlattice on a substrate defining a collector region therein. The first superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor mon...