US Patent Issued to ASM IP Holding on Sept. 8 for "Reaction chamber for processing semiconductor substrates with gas flow control capability" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,426, issued on Sept. 8, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Reaction chamber for processing semiconductor substrates with gas flow control capability" was invented by Arun Thottappayil (Hwaseong, South Korea) and DongRak Jung (Hwaseong, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus, particularly reaction chamber for processing semiconductor substrate is presented. A reaction chamber with gas exit flow control capability comprises an upper body, a substrate supporting part, a shower head for letting in gas which is used for processing the substrate, a lower body comprising duct, wherein the duct has a mu...