ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,729,437, issued on Sept. 8, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method and system for depositing boron nitride using pulsed chemical vapor deposition" was invented by Rene Henricus Jozef Vervuurt (Leuven, Belgium) and Timothee Blanquart (Oud-Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a pulsed CVD process."

The patent was filed on Oct. 14, 2022, under Application No. 17/966,660.

*For further information,...