US Patent Issued to ASM IP Holding on Sept. 29 for "Method of forming dielectric material layer using plasma" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,747,498, issued on Sept. 29, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of forming dielectric material layer using plasma" was invented by Yoshio Susa (Tama, Japan), Norihiko Ishinohachi (Tama, Japan) and Yoshiyuki Kikuchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step at a deposition temperature comprising: providing a substrate within a first reaction chamber; providing a precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed...