US Patent Issued to ASM IP Holding on Sept. 1 for "Method of forming an epitaxial layer" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,402, issued on Sept. 1, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of forming an epitaxial layer" was invented by Rami Khazaka (Leuven, Belgium), Patricio Romero (Wilsele, Belgium), Michael Eugene Givens (Oud-Heverlee, Belgium) and Charles Dezelah (Helsinki).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a Si-comprising epitaxial layer selectively on a substrate and a semiconductor processing apparatus is disclosed. Embodiments of the presently described method of forming the Si-comprising epitaxial layer comprise performing a deposition process for forming the Si-comprising epitaxial layer selectively on a...