ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,752, issued on Oct. 20, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method for depositing phosphorus containing silicon layer" was invented by Brendan Marozas (Leuven, Belgium), Rami Khazaka (Leuven, Belgium) and Gregory Deye (Seattle).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for epitaxially growing a phosphorus doped silicon layer on a substrate is disclosed. Embodiments of the presently described method comprise exposing a substrate to a silicon precursor and to a phosphorus precursor, wherein the exposure of the substrate to the phosphorus precursor is done during an overlapping period with the exposure to the silico...