US Patent Issued to ASM IP Holding on Nov. 3 for "Method of forming SiOCN layer" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,341, issued on Nov. 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of forming SiOCN layer" was invented by Takashi Yoshida (Machida, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a silicon oxycarbonitride layer on a substrate is disclosed. An exemplary method includes forming a layer comprising SiOC and forming a layer comprising SiCN, which together form the silicon oxycarbonitride layer."

The patent was filed on June 14, 2023, under Application No. 18/209,640.

*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HIT...