ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,134, issued on May 5, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Normal pulse profile modification in a film deposition process" was invented by Chiyu Zhu (Almere, Netherlands).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is disclosed apparatus and processes for the uniform controlled growth of materials on a substrate which direct a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate. Each pulsed flow is a combination of a first pulsed subflow and a second pulsed subflow, wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latte...