ALEXANDRIA, Va., May 19 -- United States Patent no. 12,630,924, issued on May 19, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Transition metal deposition method" was invented by Charles Dezelah (Helsinki), Jan Maes Willem (Wilrijk, Belgium), Elina Farm (Helsinki), Saima Ali (Helsinki) and Antti Niskanen (Uusimaa, Finland).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a re...