ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,578, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Substrate processing method" was invented by Jeonghoon Jang (Hwaseong-si, South Korea), Kikang Kim (Yongin-si, South Korea), Youngmin Kim (Hwaseong-Si, South Korea), Haein Kim (Hwaseong-Si, South Korea) and Jeunghoon Han (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of processing a substrate in a reaction chamber, more particularly to a method of increasing a wet etch rate of SiCN layer in order to reduce an overhang from a SiCN layer formed on a stepped structure. The method comprises supplying a carbon-containing silicon ...