US Patent Issued to ASM IP HOLDING on March 3 for "Synthesis and use of precursors for vapor deposition of tungsten containing thin films" (Finnish Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,565,466, issued on March 3, was assigned to ASM IP HOLDING B.V. (Almere, Netherlands).

"Synthesis and use of precursors for vapor deposition of tungsten containing thin films" was invented by Timo Hatanpaa (Espoo, Finland), Miika Mattinen (Helsinki), Mikko Ritala (Espoo, Finland) and Markku Leskela (Espoo, Finland).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type...