US Patent Issued to ASM IP Holding on March 3 for "Method of forming treated silicon-carbon material" (Japanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,779, issued on March 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of forming treated silicon-carbon material" was invented by Hirotsugu Sugiura (Tama, Japan) and Yoshiyuki Kikuchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems of forming treated silicon-carbon material are disclosed. Exemplary methods include depositing silicon-carbon material onto a surface of the substrate and treating the silicon-carbon material. The step of treating can include a first treatment step followed by a second treatment step, wherein the first treatment step includes providing first reductant gas activated species an...