ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,974, issued on June 9, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Methods and systems for forming a layer comprising silicon oxide" was invented by Jihee Jeon (Leuven, Belgium), Timothee Blanquart (Oud-Heverlee, Belgium), Viljami Pore (Helsinki) and Charles Dezelah (Helsinki).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one...