ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,171, issued on June 23, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method and system for selectively removing material at an edge of a substrate" was invented by Yoshio Susa (Tama, Japan), Koei Aida (Hachioji, Japan), Ryo Miyama (Tokyo) and Yoshiyuki Kikuchi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber."
The patent was filed on Oct. 26, 2022, under Application No. 17/973,903.
*For furt...