US Patent Issued to ASM IP Holding on July 28 for "Method and systems for forming device structures including high-k dielectric layers and related device structures" (Arizona Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,465, issued on July 28, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method and systems for forming device structures including high-k dielectric layers and related device structures" was invented by Fu Tang (Gilbert, Ariz.) and Eric James Shero (Phoenix).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming a device structure including a high-k dielectric layer are disclosed. An exemplary method includes using a first cyclical deposition process to deposit a dielectric layer on a substrate and using a second cyclical deposition process to deposit a capping layer directly on the dielectric layer. The methods also include t...