US Patent Issued to ASM IP Holding on July 14 for "Multiple-chamber reactor for selective deposition of silicon nitride and method of using same" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,168, issued on July 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Multiple-chamber reactor for selective deposition of silicon nitride and method of using same" was invented by Ranjit Rohidas Borude (Hachioji, Japan), Annisa Noorhidayati (Tama, Japan), Agung Setiadi (Kokubunji, Japan), Hideaki Fukuda (Hachioji, Japan) and Makoto Igarashi (Fuchu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process."

The patent was filed ...