ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,983, issued on Feb. 24, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method of forming structures including a vanadium or indium layer" was invented by Eric James Shero (Phoenix), Michael Eugene Givens (Phoenix), Qi Xie (Wilsele, Belgium), Charles Dezelah (Helsinki) and Giuseppe Alessio Verni (Ottignies, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the su...