ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,837, issued on Feb. 24, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method for depositing boron nitride" was invented by Miguel Sergio De Abreu Neto (Leuven, Belgium), Jihee Jeon (Leuven, Belgium), Imane Abdellaoui (Leuven, Belgium), Timothee Blanquart (Oud-Heverlee, Belgium) and Rene Henricus Jozef Vervuurt (Leuven, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods that can be used for depositing a boron nitride film by a PECVD process. The method comprises providing a substrate into a reaction chamber,...