US Patent Issued to ASM IP Holding on Aug. 4 for "Method of selectively forming phosphorous-doped epitaxial material on a surface" (Belgian Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,931, issued on Aug. 4, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of selectively forming phosphorous-doped epitaxial material on a surface" was invented by Brendan Timothy Padraig Marozas (Leuven, Belgium) and Rami Khazaka (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems for selectively forming phosphorus-doped epitaxial material. The methods can be used to selectively form the phosphorus-doped epitaxial material within a gap from the bottom upward. Exemplary methods can be used to, for example, form source and/or drain regions in field effect transistor devices, such as in gate-all-around fi...