ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,935, issued on Aug. 4, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method of depositing material and semiconductor devices" was invented by Johanna Henrica Deijkers (Eindhoven, Netherlands), Adriaan Jacobus Martinus Mackus (Eindhoven, Netherlands), Ageeth Anke Bol (Nuenen, Netherlands), Wilhelmus M. M. Kessels (Tilburg, Netherlands), Hessel Sprey (Leuven, Belgium) and Jan Willem Maes (Wilrijk, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a su...