US Patent Issued to ASM IP Holding on April 7 for "Apparatus and methods for selectively etching silicon oxide films" (Arizona Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,928, issued on April 7, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Apparatus and methods for selectively etching silicon oxide films" was invented by Fei Wang (Tempe, Ariz.) and Woo Jung Shin (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etche...