ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,759, issued on April 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Topology-selective nitride deposition method and structure formed using same" was invented by Timothee Blanquart (Oud-Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the to...