ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,892, issued on July 14, was assigned to Asahi Kasei Microdevices Corpoation (Tokyo).

"Compound semiconductor device" was invented by Yoshiki Sakurai (Tokyo) and Daiki Yasuda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A compound semiconductor device having a high SNR is provided. A compound semiconductor device (1) includes an insulating substrate (10); a plurality of mesa-type compound semiconductor laminate portions (20) including a first compound semiconductor layer (21) having a first conductivity type, an active layer (23) made of a compound semiconductor material, and a second compound semiconductor layer (25) having a second conduct...