US Patent Issued to ARM on March 17 for "Power gating circuit with memory precharge support" (American, Indian Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,008, issued on March 17, was assigned to ARM Ltd. (Cambridge, Great Britain).

"Power gating circuit with memory precharge support" was invented by Akshay Kumar (New Delhi) and Edward Martin McCombs Jr. (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power gating circuit for a memory includes a plurality of header switches, the plurality of header switches comprising: a first transistor having a source tied to an external power supply line; and a second transistor coupled to a drain of the first transistor and having its own drain coupled to an internal voltage line of the memory, wherein the second transistor is structured to be use...