US Patent Issued to Applied Optoelectronics on Sept. 15 for "Semiconductor optical device with a buried heterostructure (BH) having reduced parasitic capacitance and reduced inter-diffusion" (Texas Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,715, issued on Sept. 15, was assigned to Applied Optoelectronics Inc. (Sugar Land, Texas).

"Semiconductor optical device with a buried heterostructure (BH) having reduced parasitic capacitance and reduced inter-diffusion" was invented by Dapeng Xu (Houston), Dion McIntosh-Dorsey (Stafford, Texas) and Huanlin Zhang (Sugar Land, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and...