ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,211, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Multilayer inner spacer for gate-all-around device" was invented by Sai Hooi Yeong (Cupertino, Calif.), Liu Jiang (Dublin, Calif.), Susmit Singha Roy (Campbell, Calif.), Abhijit Basu Mallick (Sunnyvale, Calif.), El Mehdi Bazizi (San Jose, Calif.) and Benjamin Colombeau (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices (e.g., gate-all-around (GAA) devices), process tools for manufacturing GAA devices and methods of manufacturing GAA devices and multilayer inner spacers for GAA devices are described. The multilayer inner spacer c...