US Patent Issued to Applied Materials on Sept. 1 for "Thermal CVD of titanium silicide methods to form semiconductor structures" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,405, issued on Sept. 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Thermal CVD of titanium silicide methods to form semiconductor structures" was invented by Shumao Zhang (San Jose, Calif.), Qihao Zhu (Sunnyvale, Calif.), Weifeng Ye (San Jose, Calif.), Liqi Wu (San Jose, Calif.) and Jiang Lu (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing titanium silicide (TiSi) in the formation of semiconductor structures are described. The methods include thermal chemical vapor deposition (CVD) in which a semiconductor substrate in a semiconductor processing chamber is exposed to a titanium-containing pre...