ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,698, issued on Oct. 6, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method for gapfill" was invented by Yi Xu (San Jose, Calif.), Yu Lei (Belmont, Calif.), Aixi Zhang (Sunnyvale, Calif.) and Rongjun Wang (Dublin, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of gap fill may include depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate. In addition, the method may include depositing a metal layer in the opening and on the field, where at least a portion of the sacrificial Si layer is replaced with the metal layer. The method may also include depositing a metal gapfill material in ...