US Patent Issued to Applied Materials on Oct. 27 for "Gradient oxidation and etch of PVD molybdenum for bottom up gap fill" (California Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,902, issued on Oct. 27, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Gradient oxidation and etch of PVD molybdenum for bottom up gap fill" was invented by Meng-Shan Wu (Santa Clara, Calif.), Chih-Hsun Hsu (Santa Clara, Calif.), Jiang Lu (Milpitas, Calif.), Shiyu Yue (Santa Clara, Calif.), Chun-chieh Wang (Santa Clara, Calif.), Annamalai Lakshmanan (Fremont, Calif.) and Yixiong Yang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on exposed top surface of the substrate, wherein the substrate ha...