US Patent Issued to Applied Materials on Nov. 3 for "Semiconductor devices containing bi-metallic silicide with reduced contact resistivity" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,412, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Semiconductor devices containing bi-metallic silicide with reduced contact resistivity" was invented by Sefa Dag (Fremont, Calif.), El Mehdi Bazizi (San Jose, Calif.), Gaurav Thareja (Santa Clara, Calif.), Avgerinos V. Gelatos (Scotts Valley, Calif.) and Gang Shen (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology includes semiconductor devices and methods with improved contact resistivity. Semiconductor devices include a substrate base, a silicon oxide disposed on the base defining one or more features, a bi-metallic silicide la...