US Patent Issued to Applied Materials on May 19 for "Ruthenium carbide for DRAM capacitor mold patterning" (California Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,435, issued on May 19, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Ruthenium carbide for DRAM capacitor mold patterning" was invented by Han Wang (Sunnyvale, Calif.), Gene H. Lee (San Jose, Calif.), Yu Yang (Sunnyvale, Calif.) and Jing Zhang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming electronic devices and film stacks comprising depositing a ruthenium carbide hard mask on a capacitor mold formed on a substrate. A hard mask oxide and patterned photoresist are formed, and the pattern of the patterned photoresist are transferred into the ruthenium carbide hard mask. Film stacks comprising th...