ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,429, issued on May 19, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods of depositing SiCON with C, O, and N compositional control" was invented by Mark Saly (Santa Clara, Calif.), David Thompson (San Jose, Calif.), Thomas Knisley (Livonia, Mich.) and Bhaskar Jyoti Bhuyan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an opt...