ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,369, issued on March 31, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Integrated method and tool for high quality selective silicon nitride deposition" was invented by Tomohiko Kitajima (San Jose, Calif.), Ning Li (San Jose, Calif.), Chang Seok Kang (Santa Clara, Calif.) and Naomi Yoshida (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern openi...