ALEXANDRIA, Va., March 3 -- United States Patent no. 12,565,702, issued on March 3, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).
"Method of selective metal deposition using separated reactant activation and plasma discharging zone" was invented by Ying-Bing Jiang (San Jose, Calif.), Joung Joo Lee (San Jose, Calif.), Xianmin Tang (San Jose, Calif.), Jiang Lu (Milpitas, Calif.), Avgerinos V. Gelatos (Scotts Valley, Calif.), Dien-yeh Wu (San Jose, Calif.), Weifeng Ye (San Jose, Calif.), Yiyang Wan (Sunnyvale, Calif.), Gary How (Sunnyvale, Calif.) and Joseph Hernandez (Sunnyvale, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing a metal silicide on a substrate are provi...