US Patent Issued to Applied Materials on March 3 for "Method of in-situ selective metal removal via gradient oxidation for gapfill" (California Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,804, issued on March 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method of in-situ selective metal removal via gradient oxidation for gapfill" was invented by Chih-Hsun Hsu (Santa Clara, Calif.), Shiyu Yue (Santa Clara, Calif.), Jiang Lu (Milpitas, Calif.), Rongjun Wang (Dublin, Calif.), Xianmin Tang (San Jose, Calif.), Zhenjiang Cui (San Jose, Calif.), Chi Hong Ching (Santa Clara, Calif.), Meng-Shan Wu (Santa Clara, Calif.), Chun-chieh Wang (Santa Clara, Calif.), Wei Lei (Santa Clara, Calif.) and Yu Lei (Belmont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for a gap-fill in semiconductor device...