US Patent Issued to Applied Materials on March 24 for "Template for nanosheet source drain formation with bottom dielectric" (California Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,248, issued on March 24, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Template for nanosheet source drain formation with bottom dielectric" was invented by Benjamin Colombeau (San Jose, Calif.), Saurabh Chopra (Saratoga, Calif.), Myungsun Kim (Pleasanton, Calif.) and Balasubramanian Pranatharthiharan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of manufacturing the same are described. The method includes forming a bottom dielectric isolation (BDI) layer on a substrate and depositing a template material in the source/drain trench. The template material is crystallized. Epitaxial...