US Patent Issued to Applied Materials on March 24 for "Methods for reducing surface defects in active film layers" (Chinese, American Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,415, issued on March 24, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods for reducing surface defects in active film layers" was invented by Ming Gao (Xi'an Shaanxi, China), Lizhong Sun (San Jose, Calif.) and Xiaodong Yang (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and ...