US Patent Issued to Applied Materials on March 17 for "In-situ EPI growth rate control of crystal thickness using parametric resonance sensing" (California Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,577,673, issued on March 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"In-situ EPI growth rate control of crystal thickness using parametric resonance sensing" was invented by Sathya Shrinivas Chary (San Francisco).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are parameteric resonance monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the dep...