ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,840, issued on June 9, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).
"Methods of formation of a SiGe/Si superlattice" was invented by John Tolle (Gilbert, Ariz.), Thomas Kirschenheiter (Tempe, Ariz.), Joe Margetis (Gilbert, Ariz.), Patricia M. Liu (Saratoga, Calif.), Zuoming Zhu (Sunnyvale, Calif.) and Flora Fong-Song Chang (Saratoga, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for forming a super-lattice structure on a substrate is described herein. The super-lattice structure includes a plurality of silicon-germanium layers and a plurality of silicon layers disposed in a stacked pattern. The methods ...